刊名：Applied Mathematics and Mechanics (English Edition)（应用数学和力学（英文版））
年，卷（期）：2022年，43卷，5期
页码：615-626
题名：Effects of mechanical loadings on the performance of a piezoelectric hetero-junction
作者：Wanli YANG1, Renzhong HONG1, Yunbo WANG2, Yuantai HU1
单位：1. Department of Mechanics, School of Aerospace Engineering, Hubei Key Laboratory of Engineering Structural Analysis and Safety Assessment, Huazhong University of Science and Technology, Wuhan 430074, China;
2. Department of Microelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
摘要：A fully-coupled model for a piezoelectric hetero-junction subjected to a pair of stresses is proposed by discarding the depletion layer approximation. The effect of mechanical loadings on PN junction performance is discussed in detail. Numerical examples are carried out for a p-Si/ZnO-n hetero-junction under a pair of stresses acting on the ntype ZnO portion near the PN interface, where ZnO has the piezoelectric property while Si is not. It is found that the bottom of conduction band is lowered/raised near the two loading points due to the decrease/increase in the electron potential energy there induced by a tensile-stress mode via sucking in majority-carriers from two outside regions, which implies appearance of a potential barrier and a potential well near two loading points. Furthermore, the barrier height and well depth gradually become large with increasing tensile stress such that more and more electrons/holes are inhaled in loading region from the n-/p-zone, respectively. Conversely, rising/dropping of conduction band bottom is brought out near the two loading points by a compressive-stress mode due to the increase/decrease in the potential energy of electrons by pumping out the majority-carriers from the loading region to the two outside regions. Therefore, a potential well and a potential barrier are induced near the two loading points, such that more and more electrons/holes are driven away from the loading region to the n-zone/p-zone, respectively, with the increasing compressive stress. These effects are important to tune the carrier recombination rate near the PN interface. Thus, the present study possesses great referential significance to piezotronic devices.
关键词：piezoelectricity, hetero-junction, polarized charge, potential barrier, tuning
全文链接：https://www.amm.shu.edu.cn/EN/10.1007/s10483-022-2848-7
https://link.springer.com/article/10.1007/s10483-022-2848-7